METHOD FOR CLEANING SUBSTRATE AFTER CHEMICAL AND MECHANICAL POLISHING

• Main Authors: ARIMOTO YOSHIHIRO, NAKAMURA WATARU
• Format: Patent
• Language: English
• Published: 21.01.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To completely remove the particles adhering to a substrate after the substrate is chemically and mechanically polished by dipping the substrate in a solution in which the colloidal state of polishing particles in a polishing liquid becomes unstable and the particles cohere to larger particles and, after taking out the substrate from the solution, cleaning the substrate with a scrubber. SOLUTION: After a substrate is chemically and mechanically polished, the substrate is dipped in such a solution that causes polishing particles in the polishing liquid used for the chemical and mechanical polishing to cohere. Therefore, the polishing particles remaining on the surface of the substrate after polishing can be removed easily when the substrate is cleaned with a scrubber, because the particles cohere to larger grains. After the substrate is cleaned with the scrubber, the substrate is subjected to SCI cleaning, because small particles are difficult to remove with the scrubber as compared with large particles. Consequently, the number of ZrO2 particles, CeO2 particles, etc., having high reactivity against oxide films which are objects to be polished can be reduced.