MAKING OF CONTACT HOLES IN SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To enable self-aligned contact holes to be made in a fine semiconductor device. SOLUTION: As a stop layer to be subjected to a reactive ion etching(RIE) process at the time of making contact holes between wiring lines having a narrow spacing therebetween, a polysilicon layer is...

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Bibliographic Details
Main Author UMEBAYASHI HIROSHI
Format Patent
LanguageEnglish
Published 26.08.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To enable self-aligned contact holes to be made in a fine semiconductor device. SOLUTION: As a stop layer to be subjected to a reactive ion etching(RIE) process at the time of making contact holes between wiring lines having a narrow spacing therebetween, a polysilicon layer is previously deposited through a silicon nitride film on a polysilicon upper layer in which the contact holes are to be made. That is, the deposited polysilicon layer acts as a stopper for stopping the RIE process. Therefore, self-aligned contact holes are made in the polysilicon lower wiring layer. After formation of the contact holes, polysilicon plugs 9A and 9B are formed within the contact holes. Then the polysilicon layer used as the stopper is subjected to an oxidation process to form a silicon oxide film 10, that is, is modified from the conductive film to the insulating film.
Bibliography:Application Number: JP19960028216