FIELD EFFECT TRANSISTOR AND MANUFACTURE OF THE SAME

• Main Author: UDA TOMOYA
• Format: Patent
• Language: English
• Published: 15.08.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide FET having high breakdown strength between gate/drain and high mutual conductance and to provide a method for manufacturing FET with satisfactory reproducibility. SOLUTION: A gate electrode 13 constituted of WSi is formed on a GaAs substrate 11 where an n-layer 12 is...