PRODUCTION OF LOWER PERFLUOROALKANE
PROBLEM TO BE SOLVED: To readily produce a lower perfluoroalkane useful as an etching agent for semiconductors, a refrigerat or a forming agent at a relatively low reactional temperature and a low cost. SOLUTION: A perfluoroalkane (e.g. tetrafluoroethlene) is reacted alone pr with carbon dioxide in...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
15.07.1997
|
Edition | 6 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To readily produce a lower perfluoroalkane useful as an etching agent for semiconductors, a refrigerat or a forming agent at a relatively low reactional temperature and a low cost. SOLUTION: A perfluoroalkane (e.g. tetrafluoroethlene) is reacted alone pr with carbon dioxide in the presence of an activated carbon catalyst and thermally decomposed, preferably at 500-800 deg.C to afford a lower perfluoroalkane which is the objective compound, e.g. tetrafluoromethane, haxafluoroethane or octafluoropropane. The mixing molar ratio of the perfluoroalkene/carbon dioxide is preferably (1/3)-4. The contact time of the activated carbon catalyst with the raw material gas is preferably 1-60sec. |
---|---|
Bibliography: | Application Number: JP19950354119 |