MICROWAVE SWITCHING ELEMENT

PURPOSE: To provide improved linearity by connecting a specified circuit element to the gate electrode of a field effect transistor(FET) whose operating state is controlled by control signals impressed to the gate electrode. CONSTITUTION: An input signal terminal 13 is connected to the drain electro...

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Bibliographic Details
Main Author TAKASU HIDEKI
Format Patent
LanguageEnglish
Published 17.01.1997
Edition6
Subjects
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Summary:PURPOSE: To provide improved linearity by connecting a specified circuit element to the gate electrode of a field effect transistor(FET) whose operating state is controlled by control signals impressed to the gate electrode. CONSTITUTION: An input signal terminal 13 is connected to the drain electrode D of the FET 14 and the drain electrode D is connected to an output signal terminal 15. The gate electrode G is connected through a transmission line 17 whose line length is the 1/4 length of the propagation wavelength of input signals and a resistor 18 provided with an extremely large resistance value to a control signal terminal 19. The impedance of the gate electrode G of the FET 14 is provided with the resistance value extremely large enough to consider that the resistor 18 is in an open state in terms of a high frequency. The resistance value is impedance converted in the transmission line 17 and turned to an extremely small value. Thus, the gate electrode G is turned to a grounded state in terms of the high frequency.
Bibliography:Application Number: JP19950160490