MICROWAVE SWITCHING ELEMENT
PURPOSE: To provide improved linearity by connecting a specified circuit element to the gate electrode of a field effect transistor(FET) whose operating state is controlled by control signals impressed to the gate electrode. CONSTITUTION: An input signal terminal 13 is connected to the drain electro...
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Main Author | |
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Format | Patent |
Language | English |
Published |
17.01.1997
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: To provide improved linearity by connecting a specified circuit element to the gate electrode of a field effect transistor(FET) whose operating state is controlled by control signals impressed to the gate electrode. CONSTITUTION: An input signal terminal 13 is connected to the drain electrode D of the FET 14 and the drain electrode D is connected to an output signal terminal 15. The gate electrode G is connected through a transmission line 17 whose line length is the 1/4 length of the propagation wavelength of input signals and a resistor 18 provided with an extremely large resistance value to a control signal terminal 19. The impedance of the gate electrode G of the FET 14 is provided with the resistance value extremely large enough to consider that the resistor 18 is in an open state in terms of a high frequency. The resistance value is impedance converted in the transmission line 17 and turned to an extremely small value. Thus, the gate electrode G is turned to a grounded state in terms of the high frequency. |
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Bibliography: | Application Number: JP19950160490 |