RWG LASER DIODE WITH INVERSE MESA STRUCTURE AND ITS MANUFACTURE

• Main Authors: RI SOURIYUU, KIN BOUJIYO, KIN TONSHIYU, SHIN EIKON
• Format: Patent
• Language: English
• Published: 16.05.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To prevent a contact metal from being cut off from both side of an invested mesa structure of a reverse RWG by forming a polyimide spacer on the side wall of the invented mesa structure, sticking the contact metal entirely by vapor-depositing, and allowing it to be brought into contact with a contact layer. SOLUTION: A buffer layer 2, an active layer 3, a clad layer 4, and a contact layer 5 are piled up in order on a substrate 1, and a mask is formed thereon, then the clad layer 4 is etched by specified depth with the contact layer 5 so as to form an inverted mesa. Next, the mask is removed and a silicon oxide film 6 is stuck entirely over a wafer by vapor-depositing, thereby forming a polymide film thereon. Next, it is etched by a specified depth to remove the polyimide in the upper side of the inverted mesa, and flattened polyimide is formed on both sides of the inverted mesa, than the exposed silicon oxide film 6 is etched. Further, the polyimide is anisotropically etched to form a polyimide spacer 9' on the side wall of the diverted mesa structure. A contact metal 7 and a gold plating metal 8 are entirely subjected to vapor-depositing thereafter.