MATERIAL FOR TANTALUM OXIDE FILM VAPOR PHASE GROWTH

• Main Authors: SUZUKI TOSHIYUKI, NAKAMURA KOICHI, KUROKI MASAMI
• Format: Patent
• Language: English
• Published: 06.05.1997
• Edition: 6
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To prevent the generation of particles, improve the smoothness, and realize an easy micro-fabrication in a post-processing by adopting such a material for tantalum oxide film vapor phase growth that comprises high-purity tantalum alkoxide whose chlorine element is less than specific value. SOLUTION: This material is made of high-purity tantalum alkoxide whose chlorine element is less than 10ppm, and the high-purity tantalum alkoxide is used to form a tantalum oxide film on a substrate. Any alkoxide including chlorine element can be applied to the purification method for obtaining high- purity tantalum alkoxide, however, a tantalum nitride is allowed to react with alcohol and is subjected to dechlorination by using ammonium gas. As a result, the obtained tantalum alkoxide whose chlorine element value is adjusted is preferable.