MULTILAYER STRUCTURE AND GROWTH METHOD OF GAN-BASED COMPOUND SEMICONDUCTOR THIN FILM

• Main Authors: IKEDA MASAKIYO, NAKAI AKINOBU
• Format: Patent
• Language: English
• Published: 12.01.1996
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To obtain a high quality buffer layer without receiving influence of fluctuation between lots of NH3 cylinders and thereby to obtain crystal thin film of a GaN based compound semiconductor having the mirror-surface by providing a buffer layer consisting of InGaN of the specified composition on a sapphire substrate and then forming thereon a single crystal thin film of the GaN-based compound semiconductor. CONSTITUTION:The InxGa1-xN (0<x<=0.3) is provided as a buffer layer on a sapphire and single crystal thin film of the GaN-based compound semiconductor (GazAl1-z)1-yInyN (0<=y<=-1) is also provided thereon. In the GaN-based compound semiconductor thin film growing method, the sapphire substrate is heat-processed at 900 to 1100 deg.C with the organic metal vapor phase growth method causing a buffer layer consisting of InxGa1-xN (0<x<=0.3) using TMGa, TMIn, NH3 as the raw materials to grow on this substrate, keeping the sapphire substrate at 300 to 700 deg.C for the heat treatment thereof at 900 deg.C or higher.