SEMICONDUCTOR MANUFACTURING APPARATUS

PURPOSE: To enhance the long-term stable operation and the yield of an apparatus by a method wherein a reaction product which is stuck and deposited on the wall surface of a low-pressure reaction container for a CVD apparatus or the like is removed without damaging the reaction container. CONSTITUTI...

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Bibliographic Details
Main Authors WATANABE TOMOJI, UCHINO TOSHIYUKI, HOSHINO MASAKAZU
Format Patent
LanguageEnglish
Published 22.03.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: To enhance the long-term stable operation and the yield of an apparatus by a method wherein a reaction product which is stuck and deposited on the wall surface of a low-pressure reaction container for a CVD apparatus or the like is removed without damaging the reaction container. CONSTITUTION: A coating film 20 whose material is different from that of a reaction container 1 is formed inside the reaction container 1 for a CVD apparatus. A deposited film which is deposited on the coating film 20 inside the reaction container 1 is etched by a gas. When the deposited film is etched and removed, the coating film 20 is then etched. As a result, N2 gas is generated inside the reaction container 1. A change in its concentration is monitored by a gas analyzer 10, and an etching process for cleaning the deposited film is finished.
Bibliography:Application Number: JP19940212360