MANUFACTURE OF EPITAXIAL WAFER

PURPOSE: To provide a manufacture of an epitaxial wafer, which has a surface having high flatness and high cleanness and in which a particle level is also low. CONSTITUTION: The surface of a wafer after etching treatment is washed by an SC-1 cleaning liquid. The silicon wafer is dipped into an HF so...

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Bibliographic Details
Main Authors TAKAISHI KAZUNARI, KONISHI HISAKAZU, SHIMIZU KOTARO, NISHIGAKI AKIRA
Format Patent
LanguageEnglish
Published 22.03.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: To provide a manufacture of an epitaxial wafer, which has a surface having high flatness and high cleanness and in which a particle level is also low. CONSTITUTION: The surface of a wafer after etching treatment is washed by an SC-1 cleaning liquid. The silicon wafer is dipped into an HF solution. Epitaxial growth is conducted on the surface of the wafer for the time left as it is in atmospheric air within eight hours. Epitaxial growth may also be performed above 1000 deg.C or between 400 deg.C and 1000 deg.C. The high-temperature epitaxial growth and the low-temperature epitaxial growth may also be repeated alternately. According to the low-temperature epitaxial growth, cost can be reduced by the lowering of a temperature. The epitaxial surface may also be polished.
Bibliography:Application Number: JP19940240685