THIN FILM VAPOR PHASE DEPOSITION APPARATUS

• Main Author: MATSUNAMI TORU
• Format: Patent
• Language: English
• Published: 17.12.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: To improve distribution of raw material gas flowing rate without any gradient of a substrate on which a film is formed. CONSTITUTION: A raw material gas is supplied from a nozzle 4 to a film forming substrate 2 which is accommodated in a lateral type reaction vessel 1. The reaction vessel is formed in such a manner that the interval of the side walls 1a at the area where the film forming substrate is located becomes narrower as it goes to the rear end position from the front end position of the film forming substrate and thereby the cross-sectional area of the gas flowing path becomes small in the down-flowing side to raise the flowing rate of gas. Since it is not required to incline the film forming substrate, heating of the upper surface of the reactive vessel from the substrate can be controlled, adhesion and deposition of a byproduct can be prevented, and drop onto the substrate of a byproduct which interferes normal film formation can be prevented. A flowing path cross-sectional area adjusting member 7 which makes narrower the gap at the center of nozzle and marks large the gap as it goes to the both end portions is provided on the internal surface of upper wall of nozzle and at the internal surface of lower wall. Thereby, the gas can be applied to the substrate with sufficient divergence without deviation to the center area.