SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

PURPOSE: To obtain a fine pattern semiconductor device in which high speed operation is realized especially when a large number of peripheral circuits are provided and the sheet resistance of diffusion layer is low at the peripheral circuit part. CONSTITUTION: After a side wall of SiO2 film 22 is fo...

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Bibliographic Details
Main Author UMEBAYASHI HIROSHI
Format Patent
LanguageEnglish
Published 03.12.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: To obtain a fine pattern semiconductor device in which high speed operation is realized especially when a large number of peripheral circuits are provided and the sheet resistance of diffusion layer is low at the peripheral circuit part. CONSTITUTION: After a side wall of SiO2 film 22 is formed on a polycide layer 14, SiN film 24 is deposited on the entire surface and a poly-Si 33 is etched using the SiN film 24 as a topper to form the upper electrode of a capacitor 36. Subsequently, the SiN film 24 is etched at the peripheral circuit part 17 to expose the surface of an Si substrate 11 on which TiSi2 film 38 is deposited. Even if the SiN film 24 is etched the SiO2 film 22 is not etched but left as it is, and thereby the TiSi2 film is formed while being self-aligned.
Bibliography:Application Number: JP19950152379