THIN-FILM SEMICONDUCTOR ELEMENT

PURPOSE: To obtain a thin-film semiconductor element of a structure, wherein a drain current in an off-state of the element is reduced and at the same time, an even reduction in an off-state current is possible in case of a large quantity production of the element. CONSTITUTION: Source and drain reg...

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Bibliographic Details
Main Authors AYA YOICHIRO, NODA TOMOYUKI, SANO KEIICHI
Format Patent
LanguageEnglish
Published 29.11.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: To obtain a thin-film semiconductor element of a structure, wherein a drain current in an off-state of the element is reduced and at the same time, an even reduction in an off-state current is possible in case of a large quantity production of the element. CONSTITUTION: Source and drain regions 2 and 3 of a thin-film transistor respectively have a laminated structure, wherein a doped amorphous semiconductor layer 2a consisting of a high-resistance a-Si film is formed in the side of the upper layer of the region 2 and a doped polycrystalline semiconductor layer 2b consisting of a low-resistance impurity-doped a-Si film is formed in the side of the lower layer of the region 2, and a laminated structure, wherein a doped amorphous semiconductor layer 3a consisting of a high-resistance a-Si film is formed in the side of the upper layer of the region 3 and a doped polycrystalline semiconductor layer 3b consisting of a low-resistance doped a-Si film is formed in the side of the lower layer of the region 3. The thickness of the layers 2a and 3a is formed in such a way as to become thicker than that of a channel of the transistor.
Bibliography:Application Number: JP19950118635