PLASMA PROCESSING DEVICE

PURPOSE: To reduce problems such as decrease of etching efficiency and deterioration of work precision by local electrification generated in the case of etching a super-high integration semiconductor device by a plasma. CONSTITUTION: A quartz discharge tube 101 is separated into an electron supply p...

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Bibliographic Details
Main Authors YOKOGAWA KATANOBU, MIZUTANI TATSUMI
Format Patent
LanguageEnglish
Published 01.11.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:PURPOSE: To reduce problems such as decrease of etching efficiency and deterioration of work precision by local electrification generated in the case of etching a super-high integration semiconductor device by a plasma. CONSTITUTION: A quartz discharge tube 101 is separated into an electron supply plasma range 103 and processing plasma range 104 by a flat porous extension electrode group 102, and a work sample 109 installed in the processing plasma range is processed with processing plasma, while electrons are accelerated from the electron supply plasma range by the flat porous extension electrode group to provide a structure to be capable of radiation to the work sample. A high frequency field is applied in the processing plasma range for improving work efficiency, and the temperature can be controlled by a temperature control means 112 to achieve the optimum work efficiency and work form.
Bibliography:Application Number: JP19950083648