THIN FILM SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

• Main Authors: AYA YOICHIRO, NODA TOMOYUKI, SANO KEIICHI
• Format: Patent
• Language: English
• Published: 20.08.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: To reduce a field strength at the end of a drain to contrive to improve the characteristics of a thin film semiconductor device by a method wherein attention is paid to the crystal grain diameter distribution of crystal grains in a thin film polycrystalline semiconductor film. CONSTITUTION: A thin film semiconductor device is manufactured into a structure wherein a channel part 2a, a source part 2b and a drain part 2c are formed in a plysilicon film 2 and a gate electrode 3 consisting of a polysilicon film is formed at a position, which opposes to the channel part 2a, via a gate insulating film 5. The electrode 3 has a double gate structure consisting of first and second electrode parts 3a and 3b, the first electrode part 3a and the second electrode part 3b respectively have a small-grain diameter crystal region on the side close to the source part 2b and on the side close to the drain part 2c and high-resistance parts are respectively formed at these small-grain diameter crysal regions.