MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Authors: TSURU TAKESHI, OKAMURA TAKAYUKI
• Format: Patent
• Language: English
• Published: 16.07.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: To increase the capacity of a trench capacitor without increasing the area occupied by the trench within a memory chip. CONSTITUTION: A first insulating layer 5 is made along the side and the bottom of a trench 3 and the surface of a semiconductor substrate 1, and further a first electrode layer 8, a second insulating layer 7, and a second electrode layer 8 are stacked in order by CVD method. And, the first electrode layer 6 is etched, and then the first insulating layer 5, the first electrode layer 6, the second insulating layer 7, and the second electrode layer 8 are flattened so that the level of them may accord with the level of the surface of the semiconductor substrate 1. After flattening, a third electrode layer 9 is made within the trench 3, and after removal of the first insulating layer 5 and the second insulating layer 7, a capacitor insulating film 10 is made on the surface of the first, second, and third electrode layers 6, 8, and 9 and the surface of the substrate 1, and a fourth electrode layer 11 is made on the surface.