PATTERN FORMING METHOD

• Main Authors: HIRAIWA TOMOKO, TAKEMOTO KAZUNARI
• Format: Patent
• Language: English
• Published: 12.07.1996
• Edition: 6
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE: To realize a pattern of high accuracy through self-development by irradiation with excimer laser ray taking advantage of an organic compound thin film of high sensitivity. CONSTITUTION: A polyamide acid or a polyimide thin film possessed of at least either Si-Si bonds or Ge-Ge bonds in chains is formed as a photosensitive organic high-molecular thin film 1 on a prescribed substrate 2. The photosensitive organic high-molecular thin film 1 is irradiated with excimer laser ray in an oxygen-free atmosphere for exposure, and self-development is made to progress for the formation of a pattern. The patterned high-molecular thin film 1 is used as a resist film 1a, and a processed film 3 (e.g. carbon film) under the resist film 1a is dry-etched, whereby the accurately patterned resist film 1a is easily transferred to the processed film 3 for the formation of a processed film pattern 3a. The high-molecular thin film 1 may be kept in either a polyamide acid state or a polyimide state at exposure, but it is higher in sensitivity in the former state than in the latter state. When the thin film 1 is finally used as a resist film or an interlayer insulating film, polyamide acid is turned into polyimide so as to enhance the film 1 in film quality.