LAPPING METHOD OF SILICON WAFER AND LAPPING SLURRY

PURPOSE:To provide a lapping method of a silicon wafer with improved productivity and lapping slurry by preventing scratches from being generated. CONSTITUTION:A silicon wafer is wrapped by a lapping slurry containing a solvent, a lapping powder, and a surface-active agent. The surface tension of th...

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Bibliographic Details
Main Authors TAKAISHI KAZUNARI, MATSUSHITA HIDEKI, TANAKA MASAKI, FUJIWARA SUSUMU, KITAMURA YOSHIKI
Format Patent
LanguageEnglish
Published 19.01.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:PURPOSE:To provide a lapping method of a silicon wafer with improved productivity and lapping slurry by preventing scratches from being generated. CONSTITUTION:A silicon wafer is wrapped by a lapping slurry containing a solvent, a lapping powder, and a surface-active agent. The surface tension of the lapping slurry is set to 38 dyne/cm or less, preferably 30-34 dyne/cm. Also, the lapping rate per wafer is set to 10mum/minute or less. The solvent is pure water or alkali solvent. The lapping powder is alumina or silicon carbide.
Bibliography:Application Number: JP19940175952