METHOD OF DEVELOPING PHOTORESIST

PURPOSE: To provide a method of developing a photoresist, by which the resist is removed uniformly inside the face of a semiconductor substrate and in which an irregularity in a worked line width can be reduced. CONSTITUTION: A process in which a photoresist 2 on the surface of a semiconductor subst...

Full description

Saved in:
Bibliographic Details
Main Author SUGINO MASAMI
Format Patent
LanguageEnglish
Published 31.05.1996
Edition6
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: To provide a method of developing a photoresist, by which the resist is removed uniformly inside the face of a semiconductor substrate and in which an irregularity in a worked line width can be reduced. CONSTITUTION: A process in which a photoresist 2 on the surface of a semiconductor substrate 1 is coated with a developer, a process in which the developer and the photoresist 3 dissolved by the developer are removed by turning the semiconductor substrate 1 and a process in which the surface of the semiconductor substrate is cleaned with a rinsing liquid after the photoresist 2 has been removed are executed sequentially, and the photoresist 2 is developed. The developer coating process, the photoresist removal process and the cleaning process are repeated at least two times continuously, and a cleaning effect can be increased.
Bibliography:Application Number: JP19940274850