PLASMA CVD METHOD AND APPARATUS THEREFOR

• Main Authors: BAN MASAHITO, HARA TAMIO, HAMAGAKI MANABU, RIYUUJI MAKOTO, AOYANAGI KATSUNOBU, TOKAI MASAKUNI
• Format: Patent
• Language: English
• Published: 16.01.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To form films having good quality with good productivity at a low cost in a coating treatment of the films by a plasma CVD apparatus for works, such as wafers. CONSTITUTION:The plasma CVD apparatus 1''' is provided with an electron beam gun 16 before this apparatus concentrica...