PLASMA CVD METHOD AND APPARATUS THEREFOR

• Main Authors: BAN MASAHITO, HARA TAMIO, HAMAGAKI MANABU, RIYUUJI MAKOTO, AOYANAGI KATSUNOBU, TOKAI MASAKUNI
• Format: Patent
• Language: English
• Published: 16.01.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To form films having good quality with good productivity at a low cost in a coating treatment of the films by a plasma CVD apparatus for works, such as wafers. CONSTITUTION:The plasma CVD apparatus 1''' is provided with an electron beam gun 16 before this apparatus concentrically with a chamber 2 of a plasma forming region to increase the energy of an electron beam 35. The hardly ionizable gas of a gaseous mixture to be supplied is supplied from a port 29 near an acceleration electrode 25 and the easily ionizable gas is supplied from a port 30 apart therefrom. Further, the quantity of the formed ions and free radicals is detected by a probe 34 and is fed back to an acceleration power source 20' to control the energy of an electron beam and the current of a reverse magnetic field coil 31 is controlled to eliminate the magnetic fields, by which the films contg. the decreased secondary reaction products in the gas to be ionized and having the good quality are formed.