PLASMA SPUTTERING METHOD BY EXCITATION WITH ELECTRON BEAM

• Main Authors: BAN MASAHITO, HARA TAMIO, HAMAGAKI MANABU, HASEGAWA TAKESHI, RIYUUJI MAKOTO, AOYANAGI KATSUNOBU, TOKAI MASAKUNI
• Format: Patent
• Language: English
• Published: 16.01.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To make it possible to execute coating of a substrate with films as designed by impressing a DC or RF voltage on a target. CONSTITUTION:The substrate 6 is held to face the target 21 in a reaction chamber 16. Plasma 38 is formed by irradiation with an electron beam 39 and the ions 40 in the plasma 38 are withdrawn to the substrate 6 to form the film thereon. The DC or RF voltage is, thereupon, impressed on the target 21 by using a power source 23 for biasing. The DC or RF voltage for biasing is independently impressed on the substrate 6 by using this power source 23 for biasing. The plural targets may be arranged and may be concentrically arranged as well. As a result, flux, energy and plasma forming conditions (gaseous pressure, etc.) of the ions flowing into the target are mutually and independently controllable.