MAGNETORESISTIVE ELEMENT AND MANUFACTURE THEREOF
PURPOSE: To increase an MR ratio, and to enhance magnetic field sensitivity by a method wherein the irregularity of an atomic level is formed on the interface of a magnetic layer and a non-magnetic layer in a magnetoresistive element provided with a magnetic film formed by laminating a magnetic laye...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
21.05.1996
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: To increase an MR ratio, and to enhance magnetic field sensitivity by a method wherein the irregularity of an atomic level is formed on the interface of a magnetic layer and a non-magnetic layer in a magnetoresistive element provided with a magnetic film formed by laminating a magnetic layer and a non-magnetic layer. CONSTITUTION: A Cu layer 2 is formed on a substrate 1 as a non-magnetic material layer, and a Co layer 3 is formed on the Cu layer 2 as a magnetic layer. A GaAs substrate is used as the substrate 1, and a cutting operation is conducted on the surface which is inclined by 2 deg. from a (100) surface. Accordingly, the Cu layer 2, which is the bottom layer, is formed on the surface inclined by 2 deg. from the surface (100). Accordingly, a step-like irregularity of an atomic level is formed based on lattice constant formed on the main surface of the substrate 1, and the Cu layer 2 and the Co layer 3 are laminated on the surface where the above mentioned irregularity is formed. As a result, the Cu layer 2 and the Co layer 3 are formed along irregularity, and the irregularity based on the irregularity on the surface of the substrate 1 is formed on the interface between the Cu layer 2 and and Co layer 3. |
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Bibliography: | Application Number: JP19950159563 |