MAGNETORESISTIVE ELEMENT AND MANUFACTURE THEREOF

• Main Authors: KUME MINORU, KUROKI KAZUHIKO, TANUMA TOSHIO, MAEDA ATSUSHI
• Format: Patent
• Language: English
• Published: 21.05.1996
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRICITY; INDUCTANCES; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; MAGNETS; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; TESTING; TRANSFORMERS

PURPOSE: To increase an MR ratio, and to enhance magnetic field sensitivity by a method wherein the irregularity of an atomic level is formed on the interface of a magnetic layer and a non-magnetic layer in a magnetoresistive element provided with a magnetic film formed by laminating a magnetic layer and a non-magnetic layer. CONSTITUTION: A Cu layer 2 is formed on a substrate 1 as a non-magnetic material layer, and a Co layer 3 is formed on the Cu layer 2 as a magnetic layer. A GaAs substrate is used as the substrate 1, and a cutting operation is conducted on the surface which is inclined by 2 deg. from a (100) surface. Accordingly, the Cu layer 2, which is the bottom layer, is formed on the surface inclined by 2 deg. from the surface (100). Accordingly, a step-like irregularity of an atomic level is formed based on lattice constant formed on the main surface of the substrate 1, and the Cu layer 2 and the Co layer 3 are laminated on the surface where the above mentioned irregularity is formed. As a result, the Cu layer 2 and the Co layer 3 are formed along irregularity, and the irregularity based on the irregularity on the surface of the substrate 1 is formed on the interface between the Cu layer 2 and and Co layer 3.