SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To obtain a semiconductor device having a high resistance to slipping and an improved mechanical strength and obtain the manufacturing method thereof. CONSTITUTION:A semiconductor device is so configured that nitrogen ions 3 of 1E5 atm/cc are implanted into the region having a radial width o...

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Bibliographic Details
Main Authors KAMI SUKEYUKI, NAKABEPPU KENICHI
Format Patent
LanguageEnglish
Published 31.03.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To obtain a semiconductor device having a high resistance to slipping and an improved mechanical strength and obtain the manufacturing method thereof. CONSTITUTION:A semiconductor device is so configured that nitrogen ions 3 of 1E5 atm/cc are implanted into the region having a radial width of 5mm along the circumferential edge of a silicon wafer 1. The central part of the silicon wafer 1 is masked with a photoresist 2, and the nitrogen ions 3 are implanted into the unmasked region of the silicon wafer 1, and further, a nitrogen-ion diffusion region 5 is formed by a heat treatment step for diffusing the nitrogen ions 3.
Bibliography:Application Number: JP19930252330