STORAGE ELEMENT, NONVOLATILE MEMORY, NONVOLATILE STORAGE DEVICE AND INFORMATION STORAGE METHOD USING SAME

• Main Authors: KONDO MAMORU, GOTO HIROSHI, ABE HIROSHI
• Format: Patent
• Language: English
• Published: 20.03.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PURPOSE:To shorten a writing time and to enable simplifying and miniaturizing peripheral circuits by forming a combination type nonvolatile memory cell with a DRAM type storage element in which a parasitic capacitance is made to be a capacity element and a floating gate type nonvolatile memory. CONS...