STORAGE ELEMENT, NONVOLATILE MEMORY, NONVOLATILE STORAGE DEVICE AND INFORMATION STORAGE METHOD USING SAME

• Main Authors: KONDO MAMORU, GOTO HIROSHI, ABE HIROSHI
• Format: Patent
• Language: English
• Published: 20.03.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PURPOSE:To shorten a writing time and to enable simplifying and miniaturizing peripheral circuits by forming a combination type nonvolatile memory cell with a DRAM type storage element in which a parasitic capacitance is made to be a capacity element and a floating gate type nonvolatile memory. CONSTITUTION:This device is made to have both the original function of a nonvolatile memory cell and the function of a DRAM cell by constituting a nonvolatile storage device by combining the equivalent circuit of the DRAM cell in which the parasitic capacitance C0 is connected in series with a selection switching element Tr1 via a storage node N and nonvolatile memory cells M1 to Mn. As a result, at the time of writing data, since data can be transferred to a floating gate type nonvolatile memory after data are stored transiently in DRAM cells, massive data can be transferred to the nonvolatile memory in a shirt time and the writing time is shortened and the simplification and miniaturization of the device are made possible because DRAM type storage elements for a temporal storage means are incorporated in the device.