MANUFACTURE OF SEMICONDUCTOR

PURPOSE:To provide a vacuum device wherein impurities can be diffused into semiconductor or semiconductor can be grown in crystal high in controllability and reproducibility. CONSTITUTION:A piping 3 between a reaction tube 7 reduced in pressure and a material system pipe is lessened in resistance as...

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Bibliographic Details
Main Author KOMATSU JUN
Format Patent
LanguageEnglish
Published 10.01.1995
Edition6
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:PURPOSE:To provide a vacuum device wherein impurities can be diffused into semiconductor or semiconductor can be grown in crystal high in controllability and reproducibility. CONSTITUTION:A piping 3 between a reaction tube 7 reduced in pressure and a material system pipe is lessened in resistance as much as possible so as to reduce the pressure difference between the reaction tube 7 and the material system nearly to zero. Or, the ratio of the target pressure of the reaction tube 7 to the pressure of the material system is kept nearly constant.
Bibliography:Application Number: JP19930167517