MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Author: UMEBAYASHI HIROSHI
• Format: Patent
• Language: English
• Published: 14.02.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To provide a manufacturing method for a semiconductor device in which the first transistor with the first conductivity type channel and the second transistor with the second conductivity type channel are formed on the same semiconductor substrate, and a masking process, using a resist film, and an ion-implanting process can be omitted. CONSTITUTION:Before formation of an element isolation region 34 by selective oxidation, ions are implanted on the surface of a semiconductor substrate 20 to stop the channel of an N-type transistor. Then, the surface of the semiconductor substrate 20 is selectively oxidated corresponding to an element isolation pattern, and an element isolation region 34 is formed. When selective oxidation is conducted, the ion-implanted impurities are diffused on the lower part of an element isolation region 32, narrow channel effect is positively developed on the N-type transistor, the threshold voltage of the N-type transistor is rather highly adjusted. As a result, the ion implantation for adjustment of the threshold voltage is unnecessitated to conduct separately.