SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PURPOSE:To reduce a defect at an interface between the source/drain region of a thin-film transistor and a channel formation region and near the interface. CONSTITUTION:Impurity ions are implanted into a source region 107 an a rain region 110 with a gate electrode 105 as a mask for an activation lay...

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Main Authors TAKEMURA YASUHIKO, YAMAMOTO MUTSUO, HIROKI MASAAKI, TERAMOTO SATOSHI, YAMAGUCHI NAOAKI
Format Patent
LanguageEnglish
Published 22.12.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To reduce a defect at an interface between the source/drain region of a thin-film transistor and a channel formation region and near the interface. CONSTITUTION:Impurity ions are implanted into a source region 107 an a rain region 110 with a gate electrode 105 as a mask for an activation layer 103 where crystallizability is given due to the operation of a catalyst element for promoting the crystallizability. Then, heating treatment is performed at approximately 350-550 degrees, thus growing a crystal from a region 108 with the crystallizability and crystallizing the source region 107 and the drain region 110 and activating the implanted impurities, thus preventing a defect caused by lattice mismatching from being concentracted at the interface between the region 108 with crystallizability and the source region 107 and the drain region 110.
Bibliography:Application Number: JP19940156513