PLASMA CVD SYSTEM

PURPOSE:To easily and stably form a high-grade coating film, etc., by plasma CVD without causing the unstable production of the coating film, etc., due to the excess raw gas or reaction by-product, intrusion of impurities, damage to the device and increase in the production cost. CONSTITUTION:This p...

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Bibliographic Details
Main Authors ISHII YOSHIRO, FUNAKI YOSHIYUKI
Format Patent
LanguageEnglish
Published 19.12.1995
Edition6
Subjects
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:PURPOSE:To easily and stably form a high-grade coating film, etc., by plasma CVD without causing the unstable production of the coating film, etc., due to the excess raw gas or reaction by-product, intrusion of impurities, damage to the device and increase in the production cost. CONSTITUTION:This plasma CVD system has a heater 2 in a vacuum chamber 1. Trapping tubes 9a, 9b and 9c for depositing the excess raw gas and reaction by-product are detachably fitted in the exhaust pipe 6, raw gas feed pipe 12 and plasma emission observing window 13. Meanwhile, a cooling jacket 10 is mounted, if necessary on the tube 9a. Consequently, impurities are not mixed in the coating film to be formed.
Bibliography:Application Number: JP19940145469