DIELECTRIC PORCELAIN COMPOSITION
PURPOSE:To obtain a dielectric porcelain compsn. capable of firing at <=1,160 deg.C, satisfying X7R characteristics in spite of its high dielectric constant of >=1,000, ensuring high mechanical strength of porcelain and forming a dielectric porcelain layer having a low variation of capacitance...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
05.12.1995
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To obtain a dielectric porcelain compsn. capable of firing at <=1,160 deg.C, satisfying X7R characteristics in spite of its high dielectric constant of >=1,000, ensuring high mechanical strength of porcelain and forming a dielectric porcelain layer having a low variation of capacitance due to temp. at the time of impressing DC voltage corresponding to 50% of rated voltage in accordance with the standards of RB characteristics stipulated by JIS C6429 when the thickness of the layer is reduced to 5-15mum. CONSTITUTION:This dielectric porcelain compsn. consists of 97.5-99.95wt.% base represented by the general formula, [100-(a+b+c+d)1BaTiO3+aZnO+b(2 Bi2O3.3SnO2)+cTa2O5+dRe2O3 (where Re is at least one kind of element selected from among La, Pr, Nd, Sm, Dy and Er, 0.5<=a<= 4.5, 0.5<=b<=4.5, 0.5<=c<=4.5 and 0.5<=d<=5.5) and 0.05-2.5wt.% SiO2-based glass as a secondary component. |
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Bibliography: | Application Number: JP19940109841 |