ION IMPLANTING METHOD, AND DEVICE THEREFOR

• Main Authors: KAWANAMI YOSHIMI, MADOKORO YUICHI, UMEMURA KAORU
• Format: Patent
• Language: English
• Published: 10.11.1995
• Edition: 6
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CINEMATOGRAPHY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To provide a new resistless ion implanting method capable of reducing processes, particularly, in and around ion implanting process, for the purpose of a reduction in manufacturing cost by the compression of the process for manufacturing a semiconductor device, and a device for realizing this method. CONSTITUTION:The ion 4 emitted from an ion source 2 is passed through a mask 9 having an aperture substantially having an analogous form to a required ion implanting area to form a molded ion beam 11, and this ion beam is emitted to a required area of a wafer 16 having no application of a resist to implant the ion to the wafer. According to this method, the process for manufacturing a semiconductor device is reduced, and a reduction in manufacturing cost of the semiconductor device can be attained.