LIGHT EMITTING ELEMENT AND MANUFACTURE THEREOF

• Main Authors: WATABE SHINICHI, TADATOMO KAZUYUKI
• Format: Patent
• Language: English
• Published: 31.10.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To provide a light emitting element and its simple manufacturing method wherein its current diffusivity is good and its p-n junction part can be made to contribute efficiently to its light emission. CONSTITUTION:In an LED 1, near one end edge 4b present on a surface 4a of a p-type GaN crystal layer 4, a linear p-type electrode 9 is formed. Also, near the other end edge 3e present on a surface 3a of an n-type GaN crystal layer 3, a linear n-type electrode 11 nearly parallel with the p-type electrode 9 is formed. When the voltage applications to the p-type and n-type electrodes 9, 11 of the LED 1 are performed, a current 8 flows from the p-type electrode 9 to the n-type electrode 11. At this time, since the p-type and n-ype electrodes 9, 11 are linear, and are formed nearly in parallel with each other near both the opposite end edges 4b, 3e to each other respectively, the diffusivity of the current 8 is improved. Thereby, the current 8 passes most of the interface of a p-n junction 7 contributing the light emission of the LED 1, and as a result, the brightness of its light emission is improved.