MANUFACTURE FOR SEMICONDUCTOR DEVICE

PURPOSE:To provide a method for fabricating a DRAM wherein an accumulation electrode is made thick and formation of a lead-out wire of a peripheral circuit region is easy. CONSTITUTION:Contact holes are opened in a memory cell region and a peripheral circuit region simultaneously, and an accumulatio...

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Bibliographic Details
Main Author UMEBAYASHI HIROSHI
Format Patent
LanguageEnglish
Published 31.10.1995
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To provide a method for fabricating a DRAM wherein an accumulation electrode is made thick and formation of a lead-out wire of a peripheral circuit region is easy. CONSTITUTION:Contact holes are opened in a memory cell region and a peripheral circuit region simultaneously, and an accumulation electrode 21A and a lead-out pad 21B are formed simultaneously. A reflow film 23 is formed thereafter, and a contact hole 24 is opened in the lead-out pad 21B to form an Al film 26. Since the Al film 26 is formed after the lead-out pad 21B has been formed, the Al film can be buried with a small aspect ratio.
Bibliography:Application Number: JP19940078255