THIN FILM FORMING DEVICE FOR MANUFACTURE OF SEMICONDUCTOR

• Main Authors: INAI TAKAAKI, MURAOKA SHUNICHI
• Format: Patent
• Language: English
• Published: 27.10.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To provide a thin film formation device for semiconductor manufacturing, with which its operation rate can be highly maintained, and also the condition of cleaning for removal of deposit can be optimized easily. CONSTITUTION:When a thin film is formed on a semiconductor wafer W by introducing thin film forming reaction gas into the thin film forming device, a sensor 10, with which the thickness of the deposit deposited on the inside surface of the device is detected, is attached to the inner surface of the device located in the vicinity of the wafer W. In the above-mentioned thin film forming device, the cleaning of the inside surface of the device is required because substance is deposited on the inner surface of the device when a thin film is formed on the wafer W using reaction gas. The thickness of the deposit can be detected at all times by the sensor 10, and the deposit on the inner surface of the device can be removed by cleaning under the optimum cleaning condition without stopping the device for investigation of the amount of the deposit.