SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

PURPOSE:To secure a sufficiently stored electric charge quantity even in the case of fining a DRAM by increasing the surface area of capacity element for information storage having multi-fin structure. CONSTITUTION:When a polycrystal silicon film of two layers is etched with dry-etching using a phot...

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Bibliographic Details
Main Authors TSUKUNI KAZUYUKI, KOJIMA MASAYUKI, OKAMOTO KEIJI, USUAMI HIROHISA, NOJIRI KAZUO
Format Patent
LanguageEnglish
Published 13.10.1995
Edition6
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LABELS OR NAME-PLATES
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
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Summary:PURPOSE:To secure a sufficiently stored electric charge quantity even in the case of fining a DRAM by increasing the surface area of capacity element for information storage having multi-fin structure. CONSTITUTION:When a polycrystal silicon film of two layers is etched with dry-etching using a photo-resist 35 for a mask in sequence to form the upper layer fin 12b and a lower layer fin 12a of a storing electrode, at first the polycrystal silicon film of an upper layer is patterned in the minimum working dimension of a memory cell to form the upper layer fin 12b. Next, the lower layer fin 2a is formed by dry-etching using the photo-resist 35 and an insulating film 32 for a mask in which a polymer 36 is made to adhere to a side wall, thereby forming the lower layer fin 12a which has larger dimension in the lateral direction than the upper layer fin 12b.
Bibliography:Application Number: JP19940055812