WAFER SETTING METHOD

• Main Authors: UEKI TOSHIO, IMAI KATSUYOSHI, HOSHINA SUKEAKI
• Format: Patent
• Language: English
• Published: 13.10.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To provide a wafer setting method by which damages to the main surface of a wafer, generation of particles on the main surface, and contamination of the main surface with a metal can be prevented with a simple constitution at the time of setting the wafer on a susceptor for vapor growth which is nearly vertically held or inclined against the vertical axis of a vapor growth device. CONSTITUTION:At the time of setting a wafer W on a susceptor 52 which is provided in a vapor growth device in a nearly vertical state or in an inclined state from the vertical axis, the whole rear surface of the wafer W is brought into contact with the susceptor 52 by blowing a pressurized gas upon the surface of the wafer W. When, for example, the wafer W is set on the susceptor 52 provided in a barrel type vapor growth device in a nearly vertical state or in a state where the susceptor 52 is inclined against the vertical axis of the vapor growth device, the wafer W is put on the inner edge section 53a of a back facing 53 formed on the outer peripheral surface of the susceptor 52 by holding the rear surface of the wafer W with a vacuum chuck 21 by suction and the whole rear surface of the wafer W is brought into contact the base 53b of the back facing 53 by blowing a pressurized upon the surface of the wafer W.