SEMICONDUCTOR MODULE

PURPOSE:To prevent the reduction of efficiency even if the external shape is made compact and switching speed is made high. CONSTITUTION:Insulating plates 3A and 3B are provided on the surface of a block 10A, which is cooled with cooling water. An electrode plate part 4A of a P-side terminal 5A is t...

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Bibliographic Details
Main Author KIJIMA KENJI
Format Patent
LanguageEnglish
Published 29.08.1995
Edition6
Subjects
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Summary:PURPOSE:To prevent the reduction of efficiency even if the external shape is made compact and switching speed is made high. CONSTITUTION:Insulating plates 3A and 3B are provided on the surface of a block 10A, which is cooled with cooling water. An electrode plate part 4A of a P-side terminal 5A is tightly fixed to the surface of the insulating plate. An electrode plate 4B is tightly fixed to the surface of the insulating plate 3B. IGBTs 1 and flywheel diodes 2 are provided at the neighboring positions on the surfaces of the electrode plate 4A and the electrode plate 4B. Gate electrode plates 6A are provided at the outer end part of the electrode plate 4A and the outer end part of the electrode pate 4B, respectively.
Bibliography:Application Number: JP19940018775