MANUFACTURE OF SWITCHING ELEMENT

PURPOSE:To manufacture an MIM element and a TFT element which have uniform characteristics all over the large area. CONSTITUTION:When an insulating film is formed on the surface of first metal 2 of an MIM element or a TFT element by using an anodic oxidation method, anodic oxidation treatment is per...

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Bibliographic Details
Main Authors HOSHINO KOICHI, ISHIDA TAKAO
Format Patent
LanguageEnglish
Published 22.08.1995
Edition6
Subjects
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Summary:PURPOSE:To manufacture an MIM element and a TFT element which have uniform characteristics all over the large area. CONSTITUTION:When an insulating film is formed on the surface of first metal 2 of an MIM element or a TFT element by using an anodic oxidation method, anodic oxidation treatment is performed while a glass board 1 is brought down in anodic oxidation liquid 10 or while the surface of the anodic oxidation liquid 10 is lifted. Thereby a uniform insulating film can be formed, and an MIM element and a TFT element having uniform characteristics can be manufactured.
Bibliography:Application Number: JP19940016179