SEMICONDUCTOR STORAGE DEVICE

PURPOSE:To eliminate an unrequired current of a sense amplifier circuit and to reduce current consumption by providing a means which cuts off a current flowing into the sense amplifier circuit after the point of time when reading out information from a memory cell is finished. CONSTITUTION:A control...

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Bibliographic Details
Main Author IKEDA SETSUKO
Format Patent
LanguageEnglish
Published 24.01.1995
Edition6
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE:To eliminate an unrequired current of a sense amplifier circuit and to reduce current consumption by providing a means which cuts off a current flowing into the sense amplifier circuit after the point of time when reading out information from a memory cell is finished. CONSTITUTION:A control signal C1 is inputted to a column selector circuit 5, and potentials of bit line pairs Bt1, Bb1 are inputted to a sense amplifier circuit 11 as signals St, Sb. A potential difference corresponding to contents of information in a selected memory cell exists between the signal S1 and the signal Sb, and information is read out from a memory cell array 3 through a reading control signal RE amplified by the circuit 11 and inputted to a gate of a transistor 16 of the circuit 11. Output information read out is transmitted to a reading circuit 17, and outputted as an output signal OUT. When the signal OUT is outputted, control signal CE2 and D1 are changed from a logic '0' to '1' current does not flow to the amplifier 11. Thereby, an unrequired current of the sense amplifier circuit can be eliminated and current consumption can be reduced.
Bibliography:Application Number: JP19930164928