SPUTTERING TARGET MATERIAL CAPABLE OF FORMING FERROELECTRIC THIN FILM HAVING LITTLE UNEVENNESS OF PB CONTENT

• Main Authors: YASUKAWA TAKAMASA, NODA FUMIO, OUCHI YUKIHIRO
• Format: Patent
• Language: English
• Published: 20.01.1995
• Edition: 6
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To obtain a sputtering target material capable of forming a ferroelectric thin film having little local unevenness of the Pb content and to stabilize the characteristics of a formed thin film by specifying the crystal structure of the nucleus of excess PbO contained in a sputtering target material. CONSTITUTION:When a sputtering target material is made of a sintered compact consisting of (Pb,Ti)O3 or [(Pb,Zr/La),Ti]O3 and excess PbO accounting for 5-40wt.% of the total amt., an orthorhombic crystal structure is imparted to the nucleus of the excess PbO. Local unevenness of the PbO content in a formed ferroelectric thin film can be remarkably diminished by using the resulting target material and the characteristics of the thin film are stabilized.