CVD APPARATUS

• Main Authors: TSUCHIDA TOMOAKI, KITAHARA KOJI
• Format: Patent
• Language: English
• Published: 14.07.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To expedite a film growing speed on a wafer and to form a uniform film by preventing formation of an oxide film of several Angstrom to several tens of Angstrom on a surface of a substrate due to involved air when a boat transferred with a wafer is inserted into a heated furnace, and making supply of reaction gas to a surface of the wafer uniform. CONSTITUTION:A vertical reduced pressure CVD for forming a CVD film in the case of manufacturing a semiconductor has openings 8 at a quartz boat pole for placing a wafer to introduce nitrogen and reaction gas from the openings 8. Thus, since formation of an oxide film can be prevented, an ohmic contact is performed between a polysilicon film and a substrate or between the polysilicons. The reaction gas can uniformly be supplied to the surface of the wafer.