MAGNETO-RESISTANT MULTILAYERED FILM AND PRODUCTION THEREOF

PURPOSE:To obtain a Co/Cu multilayered film having a macro magnetoresistance effect at a high rate of film formation by depositing a thin film of an Ni-based alloy as a 1st layer on a single crystalline MgO substrate and further depositing a multilayered film consisting of thin films of a Co-based a...

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Bibliographic Details
Main Authors TAKEBAYASHI SHIGETO, MUKAI TOSHIO
Format Patent
LanguageEnglish
Published 11.07.1995
Edition6
Subjects
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Summary:PURPOSE:To obtain a Co/Cu multilayered film having a macro magnetoresistance effect at a high rate of film formation by depositing a thin film of an Ni-based alloy as a 1st layer on a single crystalline MgO substrate and further depositing a multilayered film consisting of thin films of a Co-based alloy and thin films of Cu on the 1st layer. CONSTITUTION:An oriented crystalline thin film of an Ni-based alloy with specified crystal faces oriented parallel to the surface of the film is deposited as a 1st layer on a crystalline MgO substrate at 0.05-0.5nm/sec rate of deposition. Thin films of a Co-based alloy and thin films of Cu are alternately deposited on the 1st layer at >=0.5nm/sec rate of deposition to deposit a multilayered film consisting of the oriented crystalline thin films of the Co-based alloy and the oriented crystalline thin films of Cu and the objective Co/Cu multilayered film having a macro magneto-resistance effect is obtd. on the substrate at a high rate of film formation.
Bibliography:Application Number: JP19930038792