MAGNETO-RESISTANT MULTILAYERED FILM AND PRODUCTION THEREOF
PURPOSE:To obtain a Co/Cu multilayered film having a macro magnetoresistance effect at a high rate of film formation by depositing a thin film of an Ni-based alloy as a 1st layer on a single crystalline MgO substrate and further depositing a multilayered film consisting of thin films of a Co-based a...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
11.07.1995
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To obtain a Co/Cu multilayered film having a macro magnetoresistance effect at a high rate of film formation by depositing a thin film of an Ni-based alloy as a 1st layer on a single crystalline MgO substrate and further depositing a multilayered film consisting of thin films of a Co-based alloy and thin films of Cu on the 1st layer. CONSTITUTION:An oriented crystalline thin film of an Ni-based alloy with specified crystal faces oriented parallel to the surface of the film is deposited as a 1st layer on a crystalline MgO substrate at 0.05-0.5nm/sec rate of deposition. Thin films of a Co-based alloy and thin films of Cu are alternately deposited on the 1st layer at >=0.5nm/sec rate of deposition to deposit a multilayered film consisting of the oriented crystalline thin films of the Co-based alloy and the oriented crystalline thin films of Cu and the objective Co/Cu multilayered film having a macro magneto-resistance effect is obtd. on the substrate at a high rate of film formation. |
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Bibliography: | Application Number: JP19930038792 |