VAPOR PHASE TREATING DEVICE FOR SEMICONDUCTOR WAFER

• Main Authors: ONDA SHINZABURO, NOZAKI KAORU, KATO NORIHIKO
• Format: Patent
• Language: English
• Published: 04.07.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To quickly dissolve an insulating film on a semiconductor wafer in high purity by supplying the high-purity vapor of a reagent to the surface of a sample through a filtering member by heating a larger amount of chemical as compared with the case where the chemical is naturally vaporized. CONSTITUTION:A vapor phase treating device for semiconductor wafer is basically divided into a gas generator (right side) which generates a high-purity refined gas, reaction vessel 16 which houses a sample and dissolves a dielectric film on the surface of the sample by causing the sample to react with the refined gas, and exhaust gas processing vessel 10. The vessel 2 having an opening 1 houses a liquid-like reagent 3. The opening 1 is covered by putting a hydrophobic porous film 4 on the opening 1. A heating means 5 is positioned near the vessel 2 so as to heat the inside of the vessel 2. The amount of the vapor of the reagent 3 contained in the vessel 2 is increased by heating the reagent reagent 3. The vapor of the reagent 3 thus generated is supplied to a gas supplying system 8 through the film 4. When the vapor of the reagent 3 is passed through the film 4, mists having large diameters contained in the vapor are intercepted by the film 4.