FORMATION OF SINGLE CRYSTAL THIN FILM AND SINGLE CRYSTAL THIN FILM FORMING DEVICE

• Main Authors: YOSHIMIZU TOSHIKAZU, ASAKAWA TOSHIBUMI, SHINDO MASAHIRO, UEYAMA SUMIYOSHI
• Format: Patent
• Language: English
• Published: 23.06.1995
• Edition: 6
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To form selectively a single crystal thin film with an even crystal orientation on an arbitrary region on a substrate by a method wherein a low-energy gas beam is emitted on the substrate from the directions vertical to a plurality of the densest crystal faces of the single crystal thin film. CONSTITUTION:An insulating film 526 is formed on the part of the upper surface of the region other than the region of a single crystal Si thin film except the upper surface of the region of the single crystal Si thin film on a substrate. After that, an Ne atomic flow is irradiated from the upper surfaces of the regions. At this time, only region of the single crystal Si thin film, which is not covered with the film 526, is selectively subjected to irradiation. The irradiation directions are set in a plurality of the directions vertical to a plurality of the densest faces (111) of the single crystal Si thin film orientated in such a way that one face (111) exposed on the upper surface. As a result, the region of the single crystal Si thin film is converted into a single crystal Si layer 530 with an even crystal orientation in such a way that the face (111) is exposed on the upper surface. The region 528, which is not subjected to irradiation, is a region to be formed with a 528, which is not subjected the other hand, a pressure sensor, for example, is formed on the layer 530 having the converted crystal orientation.