SPUTTERING DEVICE HAVING COLLIMATOR

• Main Authors: HIRAMATSU SHINICHI, TAHIRA TSUTOMU
• Format: Patent
• Language: English
• Published: 13.06.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To deal with a change in an aspect ratio occurring in adhesion of sputtered particles in apertures during film formation by forming a collimator to a structure in which two pieces of members fit freely vertically movably to each other and varying the length of the apertures. CONSTITUTION:The collimator 7 installed between a target material and semiconductor substrate 4 in a vacuum vessel 1 is composed of first and second collimating members 5 and 6. The apertures 17 of the collimator 7 are formed by cylindrical parts 15 of the second collimating member 6 fitted and inserted into the many cylindrical parts 15 of the first collimating member 5. The first collimating member 5 is fixed and the second collimating member 6 is vertically moved via bellows 23 by using a motor 18 outside the vacuum vessel 1 to put the cylindrical parts 16 in and out, by which the length of the apertures of the collimator 7 is changed and the prescribed aspect ratio is obtd.