LEAD FRAME AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING IT

• Main Authors: MAKINO SATOSHI, YOSHIDA NOBUO
• Format: Patent
• Language: English
• Published: 06.06.1995
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To increase the strength of dam bars so as to prevent the deformation of the outer lead section of a lead frame at the molding time or carrying time of the lead frame by making the width of the dam bars twice or more as broad as that of the outer lead section. CONSTITUTION:The width A of a dam bar 5 integrally formed at the middle section of a lead 4 is made twice or more as broad as the width B of the outer lead section 4b of the lead 4. As a result, the deterioration of the strength of the dame bar 5 can be prevented even when the width B or pitch of the outer lead section 4b is reduced. Therefore, the deformation of the outer lead section 4b integrally formed with the dam bar 5 can be prevented, because the deformation of the dam bar 5 is prevented even when the pressure of a molten resin injected into a metallic mold becomes uneven and a high pressure is applied to part of the dam bar 5 at the time of sealing part of a lead frame 1 with a resin. Since the leads 4 are hardly deformed even during the carrying time of the lead frame 1 also, the manufacturing yield of a QFP can be improved.