CONTROLLER OF DOUBLE GATE TYPE SEMICONDUCTOR DEVICE

• Main Author: TERASAWA NORIYASU
• Format: Patent
• Language: English
• Published: 12.05.1995
• Edition: 6
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION; PULSE TECHNIQUE

PURPOSE:To obtain a controller which is capable of surely controlling a pair of gate electrodes where voltage impression modes are opposite with each other by an input signal and has the protective function of an abnormal state. CONSTITUTION:This controller has a second gate electrode G 1 enabling the control of the shifting of a thyrister state and a transistor state and a first gate electrode G 2 enabling the control of the shifting of ON and OFF from the transistor state, controls the G 1 and G 2 based on an input signal by making a double gate type semiconductor device 15 where the voltage impression modes of the both gate electrodes G 1 and G 2 are opposite with each other as control objects and is provided with a first gate electrode control means 21 having a delay circuit 31 delaying the OFF signal of the input signal and supplying the signal to a first gate electrode G 1 and a second gate electrode control means 22 having an inverter 22. 1 for inversion inverting the input signal and impressing the signal on a second gate electrode G 2.